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Journal Articles

Promising neutron irradiation applications at the high temperature engineering test reactor

Ho, H. Q.; Honda, Yuki*; Hamamoto, Shimpei; Ishii, Toshiaki; Takada, Shoji; Fujimoto, Nozomu*; Ishitsuka, Etsuo

Journal of Nuclear Engineering and Radiation Science, 6(2), p.021902_1 - 021902_6, 2020/04

Journal Articles

Feasibility study of new applications at the high-temperature gas-cooled reactor

Ho, H. Q.; Honda, Yuki*; Hamamoto, Shimpei; Ishii, Toshiaki; Takada, Shoji; Fujimoto, Nozomu*; Ishitsuka, Etsuo

Proceedings of 9th International Topical Meeting on High Temperature Reactor Technology (HTR 2018) (USB Flash Drive), 6 Pages, 2018/10

Journal Articles

Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor

Ho, H. Q.; Honda, Yuki; Motoyama, Mizuki*; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

Applied Radiation and Isotopes, 135, p.12 - 18, 2018/05

 Times Cited Count:7 Percentile:57.59(Chemistry, Inorganic & Nuclear)

JAEA Reports

Irradiation test with silicon ingot for NTD-Si irradiation technology

Takemoto, Noriyuki; Romanova, N.*; Kimura, Nobuaki; Gizatulin, S.*; Saito, Takashi; Martyushov, A.*; Nakipov, D.*; Tsuchiya, Kunihiko; Chakrov, P.*

JAEA-Technology 2015-021, 32 Pages, 2015/08

JAEA-Technology-2015-021.pdf:3.15MB

Silicon semiconductor production by neutron transmutation doping (NTD) method using the JMTR has been investigated in Neutron Irradiation and Testing Reactor Center, Japan Atomic Energy Agency in order to expand the industry use. As a part of investigations, irradiation test with a silicon ingot was planned using WWR-K in Institute of Nuclear Physics, Republic of Kazakhstan. A device rotating the ingot made with the silicon was fabricated and was installed in the WWR-K for the irradiation test. And that, a preliminary irradiation test was carried out using neutron fluence monitors to evaluate the neutronic irradiation field. Based on the result, two silicon ingots were irradiated as scheduled, and the resistivity of each irradiated silicon ingot was measured to confirm the applicability of high-quality silicon semiconductor by the NTD method (NTD-Si) to its commercial production.

Journal Articles

Producing semiconductor by neutron irradiation

Komeda, Masao; Kawasaki, Kozo*

Hamon, 24(特別号), 2 Pages, 2014/11

no abstracts in English

Journal Articles

Study on energy response of a solid state nuclear track detector to neutrons up to 80MeV

Nakane, Yoshihiro; Sakamoto, Yukio

Nuclear Instruments and Methods in Physics Research A, 471(3), p.348 - 357, 2001/10

 Times Cited Count:3 Percentile:28.26(Instruments & Instrumentation)

no abstracts in English

Journal Articles

Present status of the innovative basic research on high-temperature engineering using the HTTR

Sudo, Yukio; Hoshiya, Taiji; Ishihara, Masahiro; Shibata, Taiju; Ishino, Shiori*; Terai, Takayuki*; Oku, Tatsuo*; Motohashi, Yoshinobu*; Tagawa, Seiichi*; Katsumura, Yosuke*; et al.

Proceedings of OECD/NEA 2nd Information Exchange Meeting on Basic Studies in the Field of High-temperature Engineering, p.39 - 50, 2001/00

no abstracts in English

Journal Articles

Monte Carlo calculation and measurement of energy response of a solid state nuclear track detector to neutrons from 100keV to 20MeV

Nakane, Yoshihiro; ; Sakamoto, Yukio

Radiat. Meas., 27(3), p.445 - 452, 1997/00

 Times Cited Count:10 Percentile:63.08(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Measurement of reaction rate distributions in a plastic phantom irradiated by 40-and 65-MeV guasi-monoenergetic neutrons

Nakane, Yoshihiro; ; Sakamoto, Yukio; Tanaka, Shunichi

Radiat. Meas., 28(1-6), p.479 - 482, 1997/00

 Times Cited Count:4 Percentile:37.09(Nuclear Science & Technology)

no abstracts in English

Journal Articles

Development of uniform irradiation facility for large size silicon semiconductor production

Torii, Yoshiya; Horiguchi, Yoji; ; ; ; Shigemoto, Masamitsu; Isshiki, Masahiko

UTNL-R-0333, 0, p.9.1 - 9.10, 1996/00

no abstracts in English

JAEA Reports

Journal Articles

On the relationship between carrier-life time,mobility and thermal annealing condition of NTD-silicon.

*; *; *;

KURRI-TR-289, p.41 - 45, 1987/00

no abstracts in English

JAEA Reports

Silicon Doping by Neutron Irradiation

;

JAERI-M 86-002, 31 Pages, 1986/02

JAERI-M-86-002.pdf:0.91MB

no abstracts in English

Journal Articles

Phospborus doping by newtron irradiation of semiconductor silicon.

Radioisotopes, 26(11), P. 1772, 1977/11

no abstracts in English

Oral presentation

Neutron transmutation doping of silicon and boron neutron capture therapy in research reactors

Komeda, Masao

no journal, , 

Research reactors have many utilization facilities for neuron beam experiments, irradiation tests of nuclear fuel and material, production of RI, silicon doping and the boron neutron capture therapy (BNCT). In such uses, I will pick up and introduce the silicon doping and BNCT in this presentation.

Oral presentation

Neutron transmutation doping of n-type spherical silicon solar cell at high-temperature engineering test reactor

Ho, H. Q.; Honda, Yuki; Hamamoto, Shimpei; Ishii, Toshiaki; Ishitsuka, Etsuo

no journal, , 

Oral presentation

Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor

Ishii, Toshiaki; Ho, H. Q.; Honda, Yuki; Hamamoto, Shimpei; Ishitsuka, Etsuo

no journal, , 

no abstracts in English

17 (Records 1-17 displayed on this page)
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